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中国科研院所发明授权专利引用表

时间区间

  • 发明授权按照授权公布日统计：1985-2023年

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中国科研院所发明授权专利引用表
索引ID(授权公告号)
专利权人
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专利授权公告号
专利授权公告日
专利申请号
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专利申请公布日
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CPC分类号
被引用专利ID
被引用专利名称
被引用专利申请公布号
被引用专利申请公布日
被引用专利申请号
被引用专利申请日期
被引用专利授权公告号
被引用专利授权日期
被引用专利优先权日
被引用专利发明人
被引用专利专利权人
被引用专利专利权人(中文)
被引用专利IPC分类号
被引用专利CPC分类号
被引用专利权利要求数
被引用专利引用其他专利次数
被引用专利被引用次数
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被引用专利是否FamilytoFamily引用
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中国科研院所发明授权专利引用表

索引ID(授权公告号)专利权人专利名称专利授权公告号专利授权公告日专利申请号专利申请日专利申请公布日IPC分类号CPC分类号被引用专利ID被引用专利名称被引用专利申请公布号被引用专利申请公布日被引用专利申请号被引用专利申请日期被引用专利授权公告号被引用专利授权日期被引用专利优先权日被引用专利发明人被引用专利专利权人被引用专利专利权人(中文)被引用专利IPC分类号被引用专利CPC分类号被引用专利权利要求数被引用专利引用其他专利次数被引用专利被引用次数被引用专利法律状态被引用专利是否FamilytoFamily引用添加该被引用信息的主体
CN107534072B丸文株式会社;东芝机械株式会社;国立研究开发法人理化学研究所;株式会社爱发科;东京应化工业株式会社发明授权 深紫外LED及其制造方法CN107534072B2019-04-19 00:00:0020168000317932016-11-01 00:00:002018-01-02 00:00:00H01L33/10(2006.01)I; H01L33/32(2006.01)IH01L33/16;H01L33/0075;H01L33/04;H01L33/10;H01L33/12;H01L33/14;H01L33/32;H01L33/405;H01L2933/0016;H01L2933/0058US7367691B2Omnidirectional one-dimensional photonic crystal and light emitting device made from the sameUS20040252509A12004-12-16 00:00:00US10/688,6252003-10-17 00:00:00US7367691B22008-05-06 00:00:002003-06-16 00:00:00Chung-Hsiang LinHA SHIN Co Ltd;Quantum Nil Ltd;Quantum Nil Ltd Taiwan BranchB82Y20/00;G02B6/1225;H01L33/44;H10K50/125;H10K50/856;H01L25/0753;H01L2924/0002;H01L33/50;H10K50/85;H10K50/85291165Expired - LifetimeFALSETRUE
CN107534072B丸文株式会社;东芝机械株式会社;国立研究开发法人理化学研究所;株式会社爱发科;东京应化工业株式会社发明授权 深紫外LED及其制造方法CN107534072B2019-04-19 00:00:0020168000317932016-11-01 00:00:002018-01-02 00:00:00H01L33/10(2006.01)I; H01L33/32(2006.01)IH01L33/16;H01L33/0075;H01L33/04;H01L33/10;H01L33/12;H01L33/14;H01L33/32;H01L33/405;H01L2933/0016;H01L2933/0058JP2008117922A半導体発光素子及びその製造方法JP2008117922A2008-05-22 00:00:00JP2006299348A2006-11-02 00:00:002006-11-02 00:00:00Yoji Tokumitsu;洋司 徳満;Kazuyuki Tadatomo;一行 只友;Katsuyuki Hoshino;勝之 星野;Tsunemasa Taguchi;常正 田口;Shuichi Kubo;秀一 久保Mitsubishi Chemical Corp;Yamaguchi University NUC12027WithdrawnFALSETRUE
CN107534072B丸文株式会社;东芝机械株式会社;国立研究开发法人理化学研究所;株式会社爱发科;东京应化工业株式会社发明授权 深紫外LED及其制造方法CN107534072B2019-04-19 00:00:0020168000317932016-11-01 00:00:002018-01-02 00:00:00H01L33/10(2006.01)I; H01L33/32(2006.01)IH01L33/16;H01L33/0075;H01L33/04;H01L33/10;H01L33/12;H01L33/14;H01L33/32;H01L33/405;H01L2933/0016;H01L2933/0058CN101278411A半导体发光器件中生长的光子晶体CN101278411A2008-10-01 00:00:00CNA2006800217178A2006-06-14 00:00:00CN101278411B2011-08-03 00:00:002005-06-17 00:00:00J·J·小韦勒;M·R·克雷默斯;N·F·加德纳Koninklijke Philips NV飞利浦拉米尔德斯照明设备美国有限责任公司H01L33/00;B6/13;B6/122;B29/60C30B29/60;H01L21/20;B82Y20/00;G02B6/1225;H01L33/24;H01L2933/0083;H01L33/08;H01L33/18;H01S5/11;H01S5/34333486565ActiveFALSETRUE
CN107534072B丸文株式会社;东芝机械株式会社;国立研究开发法人理化学研究所;株式会社爱发科;东京应化工业株式会社发明授权 深紫外LED及其制造方法CN107534072B2019-04-19 00:00:0020168000317932016-11-01 00:00:002018-01-02 00:00:00H01L33/10(2006.01)I; H01L33/32(2006.01)IH01L33/16;H01L33/0075;H01L33/04;H01L33/10;H01L33/12;H01L33/14;H01L33/32;H01L33/405;H01L2933/0016;H01L2933/0058JP5757512B1Deep ultraviolet LED and manufacturing method thereofJP5757512B12015-07-29 00:00:00JP2015508911A2014-10-24 00:00:00JPWO2015133000A12017-04-06 00:00:002014-03-06 00:00:00行雄 鹿嶋;行雄 鹿嶋;恵里子 松浦;恵里子 松浦;小久保　光典;光典 小久保;田代　貴晴;貴晴 田代;貴史 大川;貴史 大川;秀樹 平山;秀樹 平山;隆一郎 上村;隆一郎 上村;大和 長田;大和 長田;聡 嶋谷;聡 嶋谷MARUBUN CORP;Tokyo Ohka Kogyo Co Ltd;Ulvac Inc;RIKEN Institute of Physical and Chemical Research;Shibaura Machine Co LtdH01L33/10;H01L33/50;H01L33/0025;H01L33/0075;H01L33/06;H01L33/32;H01L33/36;H01L33/405137513ActiveFALSETRUE
CN107534072B丸文株式会社;东芝机械株式会社;国立研究开发法人理化学研究所;株式会社爱发科;东京应化工业株式会社发明授权 深紫外LED及其制造方法CN107534072B2019-04-19 00:00:0020168000317932016-11-01 00:00:002018-01-02 00:00:00H01L33/10(2006.01)I; H01L33/32(2006.01)IH01L33/16;H01L33/0075;H01L33/04;H01L33/10;H01L33/12;H01L33/14;H01L33/32;H01L33/405;H01L2933/0016;H01L2933/0058US5337328ASemiconductor laser with broad-area intra-cavity angled gratingUS5337328A1994-08-09 00:00:00US08/097,6821993-07-27 00:00:001992-05-08 00:00:00Robert J. Lang;Kenneth M. Dzurko;Donald R. Scifres;David F. WelchViavi Solutions IncH01S5/1032;H01S5/1071;H01S5/20;H01S5/423;H01S5/026;H01S5/028;H01S5/1243;H01S5/125;H01S5/187;H01S5/2036;H01S5/4075;H01S5/42;H01S5/5085572Expired - LifetimeTRUEFALSE
CN107534072B丸文株式会社;东芝机械株式会社;国立研究开发法人理化学研究所;株式会社爱发科;东京应化工业株式会社发明授权 深紫外LED及其制造方法CN107534072B2019-04-19 00:00:0020168000317932016-11-01 00:00:002018-01-02 00:00:00H01L33/10(2006.01)I; H01L33/32(2006.01)IH01L33/16;H01L33/0075;H01L33/04;H01L33/10;H01L33/12;H01L33/14;H01L33/32;H01L33/405;H01L2933/0016;H01L2933/0058US5955749ALight emitting device utilizing a periodic dielectric structureUS5955749A1999-09-21 00:00:00US08/758,9551996-12-02 00:00:001996-12-02 00:00:00John D. Joannopoulos;Shanhui Fan;Pierre R. Villeneuve;E. Frederick SchubertBoston University;Massachusetts Institute of TechnologyH01L33/24;B82Y20/00;G02B6/1225;H01L33/08287160Expired - LifetimeTRUEFALSE
CN107534072B丸文株式会社;东芝机械株式会社;国立研究开发法人理化学研究所;株式会社爱发科;东京应化工业株式会社发明授权 深紫外LED及其制造方法CN107534072B2019-04-19 00:00:0020168000317932016-11-01 00:00:002018-01-02 00:00:00H01L33/10(2006.01)I; H01L33/32(2006.01)IH01L33/16;H01L33/0075;H01L33/04;H01L33/10;H01L33/12;H01L33/14;H01L33/32;H01L33/405;H01L2933/0016;H01L2933/0058JP3991612B2Light emitting elementJP2002305328A2002-10-18 00:00:00JP2001109819A2001-04-09 00:00:00JP3991612B22007-10-17 00:00:002001-04-09 00:00:00英夫 朝川;大祐 薦田Nichia CorpH01L2224/48091;H01L2224/48247;H01L2224/48257;H01L2924/1815044Expired - Fee RelatedTRUEFALSE
CN107534072B丸文株式会社;东芝机械株式会社;国立研究开发法人理化学研究所;株式会社爱发科;东京应化工业株式会社发明授权 深紫外LED及其制造方法CN107534072B2019-04-19 00:00:0020168000317932016-11-01 00:00:002018-01-02 00:00:00H01L33/10(2006.01)I; H01L33/32(2006.01)IH01L33/16;H01L33/0075;H01L33/04;H01L33/10;H01L33/12;H01L33/14;H01L33/32;H01L33/405;H01L2933/0016;H01L2933/0058US6936854B2Optoelectronic substrateUS20020167013A12002-11-14 00:00:00US10/137,3502002-05-03 00:00:00US6936854B22005-08-30 00:00:002001-05-10 00:00:00Tatsuya Iwasaki;Tohru DenCanon IncG02B6/1225;B82Y20/00;G02B6/13;G02B6/34;G02B6/42;G02B6/4277;G02B6/43;H05K1/0274;H05K1/053162568Expired - Fee RelatedTRUEFALSE
CN107534072B丸文株式会社;东芝机械株式会社;国立研究开发法人理化学研究所;株式会社爱发科;东京应化工业株式会社发明授权 深紫外LED及其制造方法CN107534072B2019-04-19 00:00:0020168000317932016-11-01 00:00:002018-01-02 00:00:00H01L33/10(2006.01)I; H01L33/32(2006.01)IH01L33/16;H01L33/0075;H01L33/04;H01L33/10;H01L33/12;H01L33/14;H01L33/32;H01L33/405;H01L2933/0016;H01L2933/0058US6878969B2Light emitting deviceUS20040016936A12004-01-29 00:00:00US10/447,2322003-05-29 00:00:00US6878969B22005-04-12 00:00:002002-07-29 00:00:00Kenichiro Tanaka;Masao Kubo;Tomoaki Matsushima;Ryoichi TerauchiPanasonic Electric Works Co LtdH01L33/20;H01L33/025;H01L2933/0083;H01L33/2225999Expired - LifetimeTRUEFALSE
CN107534072B丸文株式会社;东芝机械株式会社;国立研究开发法人理化学研究所;株式会社爱发科;东京应化工业株式会社发明授权 深紫外LED及其制造方法CN107534072B2019-04-19 00:00:0020168000317932016-11-01 00:00:002018-01-02 00:00:00H01L33/10(2006.01)I; H01L33/32(2006.01)IH01L33/16;H01L33/0075;H01L33/04;H01L33/10;H01L33/12;H01L33/14;H01L33/32;H01L33/405;H01L2933/0016;H01L2933/0058JP4329374B2発光素子およびその製造方法JP2004128445A2004-04-22 00:00:00JP2003086107A2003-03-26 00:00:00JP4329374B22009-09-09 00:00:002002-07-29 00:00:00健一郎 田中;雅男 久保;朝明 松嶋;亮一 寺内Panasonic Corp;Panasonic Electric Works Co Ltd101072Expired - LifetimeTRUEFALSE
CN107534072B丸文株式会社;东芝机械株式会社;国立研究开发法人理化学研究所;株式会社爱发科;东京应化工业株式会社发明授权 深紫外LED及其制造方法CN107534072B2019-04-19 00:00:0020168000317932016-11-01 00:00:002018-01-02 00:00:00H01L33/10(2006.01)I; H01L33/32(2006.01)IH01L33/16;H01L33/0075;H01L33/04;H01L33/10;H01L33/12;H01L33/14;H01L33/32;H01L33/405;H01L2933/0016;H01L2933/0058JP2004200209AMethod of forming conductive pattern of electrode, etc., surface light emitting type semiconductor laser using the same, and its manufacturing methodJP2004200209A2004-07-15 00:00:00JP2002363484A2002-12-16 00:00:002002-12-16 00:00:00Masahiro Yoshikawa;昌宏 吉川Fujifilm Business Innovation CorpH01S5/18311;H01S5/18394;H01L2224/18;H01S2301/176;H01S5/0282;H01S5/2081231138PendingTRUEFALSE
CN107534072B丸文株式会社;东芝机械株式会社;国立研究开发法人理化学研究所;株式会社爱发科;东京应化工业株式会社发明授权 深紫外LED及其制造方法CN107534072B2019-04-19 00:00:0020168000317932016-11-01 00:00:002018-01-02 00:00:00H01L33/10(2006.01)I; H01L33/32(2006.01)IH01L33/16;H01L33/0075;H01L33/04;H01L33/10;H01L33/12;H01L33/14;H01L33/32;H01L33/405;H01L2933/0016;H01L2933/0058JP4610863B2Improved LED efficiency using photonic crystal structureJP2004289096A2004-10-14 00:00:00JP2003119095A2003-03-19 00:00:00JP4610863B22011-01-12 00:00:002003-03-19 00:00:00アール クレイムス マイケル;エム シガラス ミハイル;ジェイ ウィーラー ジュニア ジョナサンフィリップス ルミレッズ ライティング カンパニー リミテッド ライアビリティ カンパニー18514Expired - LifetimeTRUEFALSE
CN107534072B丸文株式会社;东芝机械株式会社;国立研究开发法人理化学研究所;株式会社爱发科;东京应化工业株式会社发明授权 深紫外LED及其制造方法CN107534072B2019-04-19 00:00:0020168000317932016-11-01 00:00:002018-01-02 00:00:00H01L33/10(2006.01)I; H01L33/32(2006.01)IH01L33/16;H01L33/0075;H01L33/04;H01L33/10;H01L33/12;H01L33/14;H01L33/32;H01L33/405;H01L2933/0016;H01L2933/0058JP4317375B2Nanoprint apparatus and fine structure transfer methodJP2004288783A2004-10-14 00:00:00JP2003077295A2003-03-20 00:00:00JP4317375B22009-08-19 00:00:002003-03-20 00:00:00成久 元脇;昭浩 宮内;雅彦 荻野;孝介 桑原Hitachi LtdB82Y10/00;B29C33/58;B29C59/022;B29C59/025;B82Y40/00;G03F7/0002;G11B5/743;B29C2059/023;B29C37/0067;B29C37/0075;G11B5/74;G11B5/82;G11B5/84;H05K3/12;Y10S977/88771384Expired - Fee RelatedTRUEFALSE
CN107534072B丸文株式会社;东芝机械株式会社;国立研究开发法人理化学研究所;株式会社爱发科;东京应化工业株式会社发明授权 深紫外LED及其制造方法CN107534072B2019-04-19 00:00:0020168000317932016-11-01 00:00:002018-01-02 00:00:00H01L33/10(2006.01)I; H01L33/32(2006.01)IH01L33/16;H01L33/0075;H01L33/04;H01L33/10;H01L33/12;H01L33/14;H01L33/32;H01L33/405;H01L2933/0016;H01L2933/0058US7083993B2Methods of making multi-layer light emitting devicesUS20040206962A12004-10-21 00:00:00US10/724,0052003-11-26 00:00:00US7083993B22006-08-01 00:00:002003-04-15 00:00:00Alexei A. Erchak;John W Graff;Michael Gregory Brown;Scott W. DuncanLuminus Devices IncH01L33/20;H01L2933/0083;H01L33/00933817075Expired - Fee RelatedTRUEFALSE
CN107534072B丸文株式会社;东芝机械株式会社;国立研究开发法人理化学研究所;株式会社爱发科;东京应化工业株式会社发明授权 深紫外LED及其制造方法CN107534072B2019-04-19 00:00:0020168000317932016-11-01 00:00:002018-01-02 00:00:00H01L33/10(2006.01)I; H01L33/32(2006.01)IH01L33/16;H01L33/0075;H01L33/04;H01L33/10;H01L33/12;H01L33/14;H01L33/32;H01L33/405;H01L2933/0016;H01L2933/0058EP1644991A2Semiconductor light emitting device, method of manufacturing the same, and lighting apparatus and display apparatus using the sameEP1644991A22006-04-12 00:00:00EP04747708A2004-07-12 00:00:002003-07-16 00:00:00Hideo NagaiPanasonic CorpH01L27/156;H01L23/16;H01L25/0753;H01L2224/48091;H01L2224/73265;H01L33/20025121WithdrawnTRUEFALSE
CN107534072B丸文株式会社;东芝机械株式会社;国立研究开发法人理化学研究所;株式会社爱发科;东京应化工业株式会社发明授权 深紫外LED及其制造方法CN107534072B2019-04-19 00:00:0020168000317932016-11-01 00:00:002018-01-02 00:00:00H01L33/10(2006.01)I; H01L33/32(2006.01)IH01L33/16;H01L33/0075;H01L33/04;H01L33/10;H01L33/12;H01L33/14;H01L33/32;H01L33/405;H01L2933/0016;H01L2933/0058US20070267646A1Light Emitting Device Including a Photonic Crystal and a Luminescent CeramicUS20070267646A12007-11-22 00:00:00US11/829,7992007-07-27 00:00:002004-06-03 00:00:00Jonathan Wierer;Serge Bierhuizen;Aurelien David;Michael Krames;Richard WeissLumileds LLCH01L33/505;B82Y20/00;C04B35/44;C04B35/547;C04B35/584;C04B35/597;C04B35/6268;C04B35/64;C04B35/645;C09K11/7774;H01L33/20;C04B2235/3213;C04B2235/3224;C04B2235/3225;C04B2235/3286;C04B2235/6027;C04B2235/662;H01L2924/0002;H01L2933/0083;H01L33/007;H01L33/0093;H01L33/105;H01L33/405;H01L33/501;H01L33/58;H01L33/60;H01L33/644;H01S5/11;H01S5/34333333479AbandonedTRUEFALSE
CN107534072B丸文株式会社;东芝机械株式会社;国立研究开发法人理化学研究所;株式会社爱发科;东京应化工业株式会社发明授权 深紫外LED及其制造方法CN107534072B2019-04-19 00:00:0020168000317932016-11-01 00:00:002018-01-02 00:00:00H01L33/10(2006.01)I; H01L33/32(2006.01)IH01L33/16;H01L33/0075;H01L33/04;H01L33/10;H01L33/12;H01L33/14;H01L33/32;H01L33/405;H01L2933/0016;H01L2933/0058JP2006196658ASemiconductor light emitting element and manufacturing method thereofJP2006196658A2006-07-27 00:00:00JP2005006263A2005-01-13 00:00:002005-01-13 00:00:00Kenji Orita;賢児 折田Panasonic Holdings Corp26019PendingTRUEFALSE
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